Microwave-assisted Allylic Oxidation at C-13 Position of 14-Deoxysinenxan A

Microwave-assisted allylic oxidation at C-13 position of 14-deoxysinenxan A was described. This new method (150℃/10 min/5 bar on microwave synthesizer) led to a better yield of compound 1 and shorter reaction time.     

一种三足型比色传感器对阴离子的颜色响应

A thiourea-based tripodal colorimetric anion sensor was synthesized. Its binding abilities with AcO^- and halide anions in DMSO were studied by UV-Vis spectra. The sensor showed different color responses to these anions. The association constants and different stoichiometries were deduced by nonlinear least-square curve fitting or linear fitting.     

增强UV-B辐射、NaCl胁迫及其复合处理对小麦幼苗光合作用及黄酮代谢的影响

依据增强UV-B辐射、NaCl胁迫及其复合处理不同天数，分别测定各处理小麦幼苗第一片真叶的净光合速率、气孔导度、叶肉细胞间隙二氧化碳浓度、叶绿素含量、黄酮含量和苯丙氨酸裂解酶活性.发现NaCl胁迫和增强UV-B辐射均明显降低小麦幼苗的净光合速率、气孔导度和叶肉细胞间隙CO2浓度;和NaCl胁迫相较， NaCl+UV-B辐射对小麦幼苗上述指标无进一步降低效应.增强UV-B辐射、NaCl胁迫及其复合处理均促进苯丙氨酸裂解酶活性和黄酮含量提高.说明了增强UV-B辐射降低小麦幼苗净光合速率的主要原因是气孔限制，而NaCl胁迫减轻了增强UV-B辐射对小麦幼苗光合作用的降低效应.     

类铍离子低激发态等电子系列的能量、精细结构和超精细结构

采用多组态相互作用方法及Rayleigh-Ritz 变分方法，并考虑相对论修正和质量极化效应，获得了类铍离子等电子系列（Z=4-10）低激发态1s²2p2p ¹D^e和1s²2p3p ³P^e的相对论能量。同时还计算了精细结构和超精细结构。计算结果与其他理论和实验符合的很好。     

Atom transfer radical polymerization of 6‐O‐methacryloyl‐1,2;3,4‐di‐O‐isopropylidene‐D‐galactopyranose in solution

A detailed exploration of the atom transfer radical polymerization (ATRP) of a sugar‐carrying monomer, 6‐O‐methacryloyl‐1,2;3,4‐di‐O‐isopropylidene‐D‐galactopyranose (MAIPGal) was performed. The factors pertinent to ATRP, such as initiators, ligands, catalysts, and temperature were optimized to obtain good control over the polymerization. The kinetics were examined in detail when the polymerization was initiated by methyl 2‐bromoisopropionate (2‐MBP), ethyl 2‐bromoisobutyrate (2‐EBiB), or a macroinitiator, [α‐(2‐bromoisobutyrylate)‐ω‐methyl PEO] (PEO–Br), with bipyridine (bipy) as the ligand at 60 °C or by 2‐EiBB with N,N,N′,N″,N″‐pentamethyldiethylenetriamine (PMDETA) as the ligand at room temperature (23 °C). The effects of the catalysts (CuBr and CuCl) were also investigated. We demonstrate that the successful ATRP of MAIPGal can be achieved for 2‐EBiB/CuBr/bipy and 2‐MBP/CuCl/bipy at 60 °C and for 2‐EBiB/CuBr/PMDETA at room temperature. The initiation by 2‐EBiB at room temperature with PMDETA as the ligand should be the most optimum operation for its moderate condition and suppression of many side reactions. Chain extension of P(MAIPGal) prepared by ATRP with methyl methacrylate (MMA) as the second monomer was carried out and a diblock copolymer, P(MAIPGal)‐b‐PMMA, was obtained. Functional polymers, poly(D‐galactose 6‐methacrylate) (PGMA), PEO‐b‐PGMA, and PGMA‐b‐PMMA were obtained after removal of the protecting groups. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 752–762, 2005     

Diode end-pumped 1123-nm Nd:YAG laser with 2.6-W output power

We present a compact and high output power diode end-pumped Nd:YAG laser which operates at the wavelength of 1123 nm. Continuous wave (CW) laser output of 2.6 W was achieved at the incident pump power of 15.9 W, indicating an overall optical-optical conversion efficiency of 16.4%, and the slope efficiency was 18%.     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

MgF2单晶中位错缺陷的ESR谱——含有130多条谱线

在室温条件下的激光晶体MgF2单晶中，实验发现含有130多条峰的电子自旋共振(ESR)波谱。两个样品分别取自MgF2单晶生长放肩的尖锥部位和MgF2:Co晶体.两个样品都没有经过任何辐照处理。两个样品具有相同的各向异性谱，说明掺入的Co2+离子引发了与MgF2单晶放肩部位相同的位错缺陷，产生了相同的多核固体自由基。这些顺磁固体自由基稳定且寿命长，产生的ESR信号是各向异性的。经初步计算拟合，谱线是由三种不同的多核自由基产生的。当磁场方向与晶体的[100]或[010]方向平行时，样品的ESR信号出现在磁场从0.2292特斯拉（T）到0.4654T的0.2362T范围内（相当于能带宽度为0.233eV）。最窄的线宽DH约为0.00128特斯拉，DH相当于相邻的能级差,是非常小的，仅有1.85×10-7eV 或1.46×10-3cm-1。这一事实表明其基态简并度是相当高的，在不太高的直流磁场下几乎是一个由准连续的能级组成的能带。这有可能成为可调谐的固体激光介质的新基点。     

粗糙核分数次积分算子的两权弱型不等式

作者得到了粗糙核分数次积分算子的两权弱型不等式,推广了Cruz-Uribe和Perez的结果.     

用Hartree-Fock-Slater-Boltzmann-Saha模型研究等离子体细致组态原子结构及其状态方程

用平均原子自洽势计算等离子体的自由电子背景，通过在Hartree Fock Slater自洽场原子结构中引入背景修正计算离子组态结构，为Boltzmann Saha方程提供能级参数，再通过调节共同的背景电子实现Saha方程与Hartree Fock Slater方程的耦合，自洽求解等离子体细致组态原子结构，提高Saha方程的计算精度.以碳、铝等离子体作为算例，分析了本方法的适用范围. 关键词： 原子结构 Boltzman Saha方程 状态方程